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Condensed matter Physics

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joshwilliams02
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Last updated: May 14, 2023
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First submittedMay 14, 2023
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Answer
crystal
any solid with a repeated structure
Wigner seitz cell
region about a lattice point that is closer to that lattice point than any other
bloch's theorem
the eigenfunction of the wave equation for a periodic potential is the product of a plane wave and the potential that has the periodicity of the crystal
Brillouin zone
equivalent to a Wigner Seitz cell in reciprocal space
effective mass
apparent mass of a particle when responding to forces
carrier mobility
ability of a charge carrier to move through a material in response to an electric field
hole
empty state in valence band due to excitation of an electron into the conduction band
fermi energy
the highest occupied electron state at absolute zero temperature
pauli exclusion principle
no 2 electrons can share the same set of quantum numbers
Matthiessen rule
total relaxation times is dependent on different sources (defects, impurities and phonons)
lattice vector
a vector that describes the translational periodicity of a lattice
insulator
in a filled band as many electrons move to the left as to the right
metal
incomplete band filling creates a Fermi surface, electric field shifts Fermi surface so not as many electrons are moving to the left as the right
fermi surface
surface in reciprocal space that separates filled and unfilled states at absolute zero
phonon
a quantum of energy
heat capacity
amount of energy a material can store per kelvin
umklapp process
requires high energy phonons, direction of total linear momentum is reversed, responsible for heat resistance
normal process
total linear momentum conserved, no heat resistance
wiedemann-franz law
assuming scattering times are the same, 2 transport processes are only different by heat capacity and charge
doping
adding/removing an electron from a semi conductor
substitution
one atomic species is swapped for another
depletion region
electrons and holes recombine with each other resulting in no net charge carriers
diffusion current
majority carrier diffuse into minority region and recombine with majority carriers
drift current
thermally generated minority carriers drift into the majority region, swept by built in e field
work function
distance between fermi level and vacuum level
transistor
a pair of p-n junctions
recombination
union of electron and hole to return to a neutral state
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