Condensed matter Physics - Statistics

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Answer Stats
Hint Answer % Correct
carrier mobility ability of a charge carrier to move through a material in response to an electric field
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doping adding/removing an electron from a semi conductor
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heat capacity amount of energy a material can store per kelvin
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crystal any solid with a repeated structure
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transistor a pair of p-n junctions
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effective mass apparent mass of a particle when responding to forces
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phonon a quantum of energy
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wiedemann-franz law assuming scattering times are the same, 2 transport processes are only different by heat capacity and charge
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lattice vector a vector that describes the translational periodicity of a lattice
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work function distance between fermi level and vacuum level
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depletion region electrons and holes recombine with each other resulting in no net charge carriers
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hole empty state in valence band due to excitation of an electron into the conduction band
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Brillouin zone equivalent to a Wigner Seitz cell in reciprocal space
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insulator in a filled band as many electrons move to the left as to the right
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metal incomplete band filling creates a Fermi surface, electric field shifts Fermi surface so not as many electrons are moving to the left as the right
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diffusion current majority carrier diffuse into minority region and recombine with majority carriers
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pauli exclusion principle no 2 electrons can share the same set of quantum numbers
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substitution one atomic species is swapped for another
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Wigner seitz cell region about a lattice point that is closer to that lattice point than any other
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umklapp process requires high energy phonons, direction of total linear momentum is reversed, responsible for heat resistance
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fermi surface surface in reciprocal space that separates filled and unfilled states at absolute zero
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bloch's theorem the eigenfunction of the wave equation for a periodic potential is the product of a plane wave and the potential that has the periodicity of the crystal
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fermi energy the highest occupied electron state at absolute zero temperature
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drift current thermally generated minority carriers drift into the majority region, swept by built in e field
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normal process total linear momentum conserved, no heat resistance
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Matthiessen rule total relaxation times is dependent on different sources (defects, impurities and phonons)
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recombination union of electron and hole to return to a neutral state
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